Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.11851/8703
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dc.contributor.authorAras F.G.-
dc.contributor.authorYilmaz A.-
dc.contributor.authorTasdelen H.G.-
dc.contributor.authorOzden A.-
dc.contributor.authorAy F.-
dc.contributor.authorPerkgoz N.K.-
dc.contributor.authorYeltik, Aydan-
dc.date.accessioned2022-07-30T16:45:53Z-
dc.date.available2022-07-30T16:45:53Z-
dc.date.issued2022-
dc.identifier.citationAras, F. G., Yilmaz, A., Tasdelen, H. G., Ozden, A., Ay, F., Perkgoz, N. K., & Yeltik, A. (2022). A review on recent advances of chemical vapor deposition technique for monolayer transition metal dichalcogenides (MX2: Mo, W; S, Se, Te). Materials Science in Semiconductor Processing, 148, 106829.en_US
dc.identifier.issn1369-8001-
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2022.106829-
dc.identifier.urihttps://hdl.handle.net/20.500.11851/8703-
dc.description.abstractTransition metal dichalcogenide (TMD) monolayers have recently garnered significant attention owing to their favorable electronic and optoelectronic properties. To date, chemical vapor deposition (CVD) growth of molybdenum di-sulfide, -selenide, and -telluride (MoS2, MoSe2, and MoTe2, respectively), and tungsten di-sulfide, -selenide, and -telluride (WS2, WSe2, and WTe2, respectively) has been widely investigated as the most promising two-dimensional (2D) TMDs. However, scalable and controllable growth of high-quality TMD monolayers remains a challenge. This review highlights the advances of CVD technique by focusing on the aspects of growth promoters, surface energy assistance and site selectivity, which are of great significance for the growth of monolayer TMDs. The challenges for high-performance applications are discussed at the end with a brief outlook on future work. © 2022 Elsevier Ltden_US
dc.description.sponsorshipTürkiye Bilimsel ve Teknolojik Araştirma Kurumu, TÜBITAK: 118C524, 118E996, 121M601, 20AG001, 20AG025en_US
dc.description.sponsorshipThis work was supported by The Scientific and Technological Research Council of Turkey , Research Project Numbers: TÜBİTAK 121M601 , TÜBİTAK 118C524 , TÜBİTAK 118E996 , TÜBİTAK 20AG025 , TÜBİTAK 20AG001 .en_US
dc.language.isoenen_US
dc.publisherElsevier Ltden_US
dc.relation.ispartofMaterials Science in Semiconductor Processingen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectChemical vapor depositionen_US
dc.subjectPatterned growthen_US
dc.subjectSalt additivesen_US
dc.subjectSeeding promotersen_US
dc.subjectTransition metal dichalcogenidesen_US
dc.subjectTwo-dimensional materialsen_US
dc.subjectChemical vapor depositionen_US
dc.subjectLayered semiconductorsen_US
dc.subjectMolybdenum compoundsen_US
dc.subjectMonolayersen_US
dc.subjectSulfur compoundsen_US
dc.subjectTransition metalsen_US
dc.subjectTungsten compoundsen_US
dc.subjectChemical vapour depositionen_US
dc.subjectDichalcogenidesen_US
dc.subjectPatterned growthen_US
dc.subjectSalt additiveen_US
dc.subjectSeeding promoteren_US
dc.subjectSelenidesen_US
dc.subjectTransition metal dichalcogenidesen_US
dc.subjectTransition metal dichalcogenides (TMD)en_US
dc.subjectTwo-dimensional materialsen_US
dc.subjectVapor-deposition techniquesen_US
dc.subjectAdditivesen_US
dc.titleA Review on Recent Advances of Chemical Vapor Deposition Technique for Monolayer Transition Metal Dichalcogenides (mx2: Mo, W; S, Se, Te)en_US
dc.typeReviewen_US
dc.departmentFakülteler, Mühendislik Fakültesi, Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümüen_US
dc.departmentFaculties, Faculty of Engineering, Department of Material Science and Nanotechnology Engineeringen_US
dc.identifier.volume148en_US
dc.identifier.wosWOS:000808274900004en_US
dc.identifier.scopus2-s2.0-85131460145en_US
dc.institutionauthorYeltik, Aydan-
dc.identifier.doi10.1016/j.mssp.2022.106829-
dc.authorscopusid57730575000-
dc.authorscopusid57730555300-
dc.authorscopusid57730575100-
dc.authorscopusid56500202700-
dc.authorscopusid6602810696-
dc.authorscopusid24401688500-
dc.authorscopusid35560157500-
dc.relation.publicationcategoryDiğeren_US
dc.identifier.scopusqualityQ1-
item.openairetypeReview-
item.languageiso639-1en-
item.grantfulltextnone-
item.fulltextNo Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
crisitem.author.dept02.6. Department of Material Science and Nanotechnology Engineering-
Appears in Collections:Malzeme Bilimi ve Nanoteknoloji Mühendisliği Bölümü / Department of Material Science & Nanotechnology Engineering
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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