Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.11851/2760
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Demir, A. | - |
dc.contributor.author | Apaydin, D. | - |
dc.contributor.author | Kurt, Hamza | - |
dc.date.accessioned | 2019-12-25T14:03:36Z | - |
dc.date.available | 2019-12-25T14:03:36Z | - |
dc.date.issued | 2019-06 | - |
dc.identifier.citation | Demir, A., Apaydın, D., and Kurt, H. (2019, June). Submicron Size All-Semiconductor Vertical Cavities with High Q. In The European Conference on Lasers and Electro-Optics (p. cb_p_21). Optical Society of America. | en_US |
dc.identifier.isbn | 978-172810469-0 | - |
dc.identifier.uri | https://hdl.handle.net/20.500.11851/2760 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/8871518/ | - |
dc.description.abstract | The miniaturization of lasers promises on-chip optical communications and data processing speeds that are beyond the capability of electronics and today's high-speed lasers [1]. Lasers with low-power consumption are one of the most important parts in creating a photonics integrated architecture. This requirement was the motivating force behind the development of small laser and nanolasers. Here, we propose a new method that could be utilized to fabricate such a laser. Oxide-VCSELs require strict control of the oxidation process with significantly reduced reliability for small size, and micropillars have degraded Q with fabrication artifacts for submicron diameter pillars [2]. We propose to use a phase-shifting current-blocking (PSCB) layer serving dual function for a nanocavity device (Fig. 1a) providing both optical- and electrical-confinement via lithographically defined and selectively-biased buried structures. Phase-shifting leads to optical-confinement tuning by layer thickness control and current-blocking provides electrical-confinement. By modifying the dimensions of these layers, the confinement can be tuned by lithographic means [3]. We studied the electromagnetic wave propagation and analyzed the quality factor (Q) of these cavities based on 3D finite difference time domain (FDTD) calculations. © 2019 IEEE. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE Computer Society | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Photonic crystals | en_US |
dc.subject | surface emitting lasers | en_US |
dc.subject | crystal nanocavities | en_US |
dc.title | Submicron size all-semiconductor vertical cavities with high Q [Code 152846] | en_US |
dc.type | Conference Object | en_US |
dc.department | Faculties, Faculty of Engineering, Department of Electrical and Electronics Engineering | en_US |
dc.department | Fakülteler, Mühendislik Fakültesi, Elektrik ve Elektronik Mühendisliği Bölümü | tr_TR |
dc.authorid | 0000-0002-0749-4205 | - |
dc.identifier.wos | WOS:000630002700078 | en_US |
dc.identifier.scopus | 2-s2.0-85074640164 | en_US |
dc.institutionauthor | Kurt, Hamza | - |
dc.identifier.doi | 10.1109/CLEOE-EQEC.2019.8871518 | - |
dc.relation.publicationcategory | Konferans Öğesi - Uluslararası - Kurum Öğretim Elemanı | en_US |
item.cerifentitytype | Publications | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.grantfulltext | none | - |
item.fulltext | No Fulltext | - |
item.languageiso639-1 | en | - |
item.openairetype | Conference Object | - |
crisitem.author.dept | 02.5. Department of Electrical and Electronics Engineering | - |
Appears in Collections: | Elektrik ve Elektronik Mühendisliği Bölümü / Department of Electrical & Electronics Engineering Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection |
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