Design and Production of Mesh Patterned Photoelectrode With Maskless Laser Lithography and Device Performance of Perovskite Derived/Zno Nras Based Photodetector

Abstract

This study reports the design and fabrication of environmentally friendly, portable, robust, and stable self-powered photoelectrochemical photodetector (PEC-PD) devices based on the heterojunction of ZnO nanorod arrays (NRA) in a mesh pattern and inorganic halide perovskites (IHP). First, the effects of distance between the center of lines in a mesh pattern on the material properties and device performance were revealed. The mesh patterned ZnO NRAs-based PEC-PD device exhibited a fast response time (tau rise/tau decay = 100/75 ms) under UV-light illumination with 367 nm of wavelength at no applied bias. The best-performing mesh pattern was then used as a sub-layer for lead-based CsPbBr3-CsPb2Br5 dual-phase and lead-free Cs2AgBiBr6 double perovskite to construct self-powered p-n junction and PEC-PD devices. Upon the deposition of Cs2AgBiBr6, the maximum photocurrent value was enhanced about 13.65 times as compared to mesh patterned pristine ZnO NRAs under AM 1.5 illumination at + 5 V of applied potential. Responsivity (RS) and Detectivity (D*) values of the mesh patterned pristine ZnO NRAs-based PD have been increased from 0.24 mAW-1 and 3.0 x 108 Jones to 3.08 mAW-1 and 7.63 x 108 Jones with Cs2AgBiBr6 layer, respectively. Furthermore, 69.18 mAW-1 of RS and 1.71 x 1010 Jones of D* value have been observed at 382 nm wavelength and + 5 V for mesh patterned ZnO NRAs/Cs2AgBiBr6 photoelectrode.