Please use this identifier to cite or link to this item:
https://hdl.handle.net/20.500.11851/11620
Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Aras, Fikret Gonca | - |
dc.contributor.author | Suleiman, Abdulsalam Aji | - |
dc.contributor.author | Parsi, Amir | - |
dc.contributor.author | Kasırga, Talip Serkan | - |
dc.contributor.author | Yeltik, Aydan | - |
dc.date.accessioned | 2024-07-21T18:45:40Z | - |
dc.date.available | 2024-07-21T18:45:40Z | - |
dc.date.issued | 2024 | - |
dc.identifier.issn | 2515-7639 | - |
dc.identifier.uri | https://doi.org/10.1088/2515-7639/ad4c05 | - |
dc.identifier.uri | https://hdl.handle.net/20.500.11851/11620 | - |
dc.description.abstract | In the rapidly developing field of optoelectronics, the utilization of transition-metal dichalcogenides with adjustable band gaps holds great promise. MoS2, in particular, has garnered considerable attention owing to its versatility. However, a persistent challenge is to establish a simple, reliable and scalable method for large-scale synthesis of continuous monolayer films. In this study, we report the growth of continuous large-area monolayer MoS2 films using a glass-assisted chemical vapor deposition (CVD) process. High-quality monolayer films were achieved by precisely controlling carrier gas flow and sulfur vaporization with a customized CVD system. Additionally, we explored the impact of chemical treatment using lithium bistrifluoromethylsulfonylamine (Li-TFSI) salt on the optical properties of monolayer MoS2 crystals. To investigate the evolution of excitonic characteristics, we conditionally grew monolayer MoS2 flakes by controlling sulfur evaporation. We reported two scenarios on MoS2 films and flakes based on substrate-related strain and defect density. Our findings revealed that high-quality monolayer MoS2 films exhibited lower treatment efficiency due to substrate-induced surface strain. whereas defective monolayer MoS2 flakes demonstrated a higher treatment sensitivity due to the p-doping effect. The Li-TFSI-induced changes in exciton density were elucidated through photoluminescence, Raman, and x-ray photoelectron spectroscopy results. Furthermore, we demonstrated treatment-related healing in flakes under variable laser excitation power. The advancements highlighted in our study carry significant implications for the scalable fabrication of diverse optoelectronic devices, potentially paving the way for widespread real-world applications. | en_US |
dc.description.sponsorship | Scientific and Technological Research Council of Turkiye (TUEBIdot;TAK); [TUEBIdot;TAK 121M601]; [TUEBIdot;TAK 118C524]; [TUEBIdot;TAK 120N885]; [TUEBIdot;TAK 123M134] | en_US |
dc.description.sponsorship | This work was supported by Scientific and Technological Research Council of Turkiye (TUEB & Idot;TAK) (Project Numbers: TUEBITAK 121M601, TUEB & Idot;TAK 118C524, TUEB & Idot;TAK 120N885, TUEB & Idot;TAK 123M134). Authors sincerely thank Professor Dr & Scedil;efik Suezer for the ARXPS holder. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Iop publishing ltd | en_US |
dc.relation.ispartof | Journal of Physics-Materials | en_US |
dc.rights | info:eu-repo/semantics/openAccess | en_US |
dc.subject | transition metal dichalcogenides | en_US |
dc.subject | monolayer MoS2 film | en_US |
dc.subject | chemical vapor deposition | en_US |
dc.subject | glass-assisted CVD | en_US |
dc.subject | Li-TFSI treatment | en_US |
dc.subject | Transition-Metal Dichalcogenides | en_US |
dc.subject | Layer Mos2 | en_US |
dc.subject | Photoluminescence | en_US |
dc.subject | Transistors | en_US |
dc.subject | Luminescence | en_US |
dc.subject | Ws2 | en_US |
dc.title | Molten Glass-Mediated Conditional Cvd Growth of Mos2 Monolayers and Effect of Surface Treatment on Their Optical Properties | en_US |
dc.type | Article | en_US |
dc.department | TOBB ETÜ | en_US |
dc.identifier.volume | 7 | en_US |
dc.identifier.issue | 3 | en_US |
dc.authorid | Suleiman, Abdulsalam Aji/0000-0002-7087-2715 | - |
dc.identifier.wos | WOS:001235795300001 | en_US |
dc.identifier.scopus | 2-s2.0-85195085625 | en_US |
dc.institutionauthor | Aras, Fikret Gonca | - |
dc.institutionauthor | Yeltik, Aydan | - |
dc.identifier.doi | 10.1088/2515-7639/ad4c05 | - |
dc.authorwosid | Aras, Gonca/AAQ-9215-2021 | - |
dc.authorwosid | Suleiman, Abdulsalam Aji/AAD-3486-2019 | - |
dc.authorscopusid | 57730575000 | - |
dc.authorscopusid | 57209110804 | - |
dc.authorscopusid | 58067057800 | - |
dc.authorscopusid | 35208635500 | - |
dc.authorscopusid | 35560157500 | - |
dc.relation.publicationcategory | info:eu-repo/semantics/openAccess | en_US |
item.openairetype | Article | - |
item.languageiso639-1 | en | - |
item.grantfulltext | none | - |
item.fulltext | No Fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | 02.6. Department of Material Science and Nanotechnology Engineering | - |
crisitem.author.dept | 02.6. Department of Material Science and Nanotechnology Engineering | - |
Appears in Collections: | Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection |
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