Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.11851/11620
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dc.contributor.authorAras, Fikret Gonca-
dc.contributor.authorSuleiman, Abdulsalam Aji-
dc.contributor.authorParsi, Amir-
dc.contributor.authorKasırga, Talip Serkan-
dc.contributor.authorYeltik, Aydan-
dc.date.accessioned2024-07-21T18:45:40Z-
dc.date.available2024-07-21T18:45:40Z-
dc.date.issued2024-
dc.identifier.issn2515-7639-
dc.identifier.urihttps://doi.org/10.1088/2515-7639/ad4c05-
dc.identifier.urihttps://hdl.handle.net/20.500.11851/11620-
dc.description.abstractIn the rapidly developing field of optoelectronics, the utilization of transition-metal dichalcogenides with adjustable band gaps holds great promise. MoS2, in particular, has garnered considerable attention owing to its versatility. However, a persistent challenge is to establish a simple, reliable and scalable method for large-scale synthesis of continuous monolayer films. In this study, we report the growth of continuous large-area monolayer MoS2 films using a glass-assisted chemical vapor deposition (CVD) process. High-quality monolayer films were achieved by precisely controlling carrier gas flow and sulfur vaporization with a customized CVD system. Additionally, we explored the impact of chemical treatment using lithium bistrifluoromethylsulfonylamine (Li-TFSI) salt on the optical properties of monolayer MoS2 crystals. To investigate the evolution of excitonic characteristics, we conditionally grew monolayer MoS2 flakes by controlling sulfur evaporation. We reported two scenarios on MoS2 films and flakes based on substrate-related strain and defect density. Our findings revealed that high-quality monolayer MoS2 films exhibited lower treatment efficiency due to substrate-induced surface strain. whereas defective monolayer MoS2 flakes demonstrated a higher treatment sensitivity due to the p-doping effect. The Li-TFSI-induced changes in exciton density were elucidated through photoluminescence, Raman, and x-ray photoelectron spectroscopy results. Furthermore, we demonstrated treatment-related healing in flakes under variable laser excitation power. The advancements highlighted in our study carry significant implications for the scalable fabrication of diverse optoelectronic devices, potentially paving the way for widespread real-world applications.en_US
dc.description.sponsorshipScientific and Technological Research Council of Turkiye (TUEBIdot;TAK); [TUEBIdot;TAK 121M601]; [TUEBIdot;TAK 118C524]; [TUEBIdot;TAK 120N885]; [TUEBIdot;TAK 123M134]en_US
dc.description.sponsorshipThis work was supported by Scientific and Technological Research Council of Turkiye (TUEB & Idot;TAK) (Project Numbers: TUEBITAK 121M601, TUEB & Idot;TAK 118C524, TUEB & Idot;TAK 120N885, TUEB & Idot;TAK 123M134). Authors sincerely thank Professor Dr & Scedil;efik Suezer for the ARXPS holder.en_US
dc.language.isoenen_US
dc.publisherIop publishing ltden_US
dc.relation.ispartofJournal of Physics-Materialsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjecttransition metal dichalcogenidesen_US
dc.subjectmonolayer MoS2 filmen_US
dc.subjectchemical vapor depositionen_US
dc.subjectglass-assisted CVDen_US
dc.subjectLi-TFSI treatmenten_US
dc.subjectTransition-Metal Dichalcogenidesen_US
dc.subjectLayer Mos2en_US
dc.subjectPhotoluminescenceen_US
dc.subjectTransistorsen_US
dc.subjectLuminescenceen_US
dc.subjectWs2en_US
dc.titleMolten Glass-Mediated Conditional Cvd Growth of Mos2 Monolayers and Effect of Surface Treatment on Their Optical Propertiesen_US
dc.typeArticleen_US
dc.departmentTOBB ETÜen_US
dc.identifier.volume7en_US
dc.identifier.issue3en_US
dc.authoridSuleiman, Abdulsalam Aji/0000-0002-7087-2715-
dc.identifier.wosWOS:001235795300001en_US
dc.identifier.scopus2-s2.0-85195085625en_US
dc.institutionauthorAras, Fikret Gonca-
dc.institutionauthorYeltik, Aydan-
dc.identifier.doi10.1088/2515-7639/ad4c05-
dc.authorwosidAras, Gonca/AAQ-9215-2021-
dc.authorwosidSuleiman, Abdulsalam Aji/AAD-3486-2019-
dc.authorscopusid57730575000-
dc.authorscopusid57209110804-
dc.authorscopusid58067057800-
dc.authorscopusid35208635500-
dc.authorscopusid35560157500-
dc.relation.publicationcategoryinfo:eu-repo/semantics/openAccessen_US
item.openairetypeArticle-
item.languageiso639-1en-
item.grantfulltextnone-
item.fulltextNo Fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
crisitem.author.dept02.6. Department of Material Science and Nanotechnology Engineering-
crisitem.author.dept02.6. Department of Material Science and Nanotechnology Engineering-
Appears in Collections:Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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