Please use this identifier to cite or link to this item: https://hdl.handle.net/20.500.11851/10382
Title: Simulation of Half-Center Oscillator Circuits Employing Newly Developed Models of Fabricated Memristors
Authors: Çolak, M.
Onay, S.
Orhan, B.
Milano, G.
Köymen, I.
Keywords: half center oscillator
memristor
modelling
resistive switching
weak inversion analogue circuits
Analog circuits
Equivalent circuits
Fabrication
MATLAB
Oscillators (electronic)
Resistors
SPICE
Timing circuits
Au/TiO2
Developed model
Half center oscillator
Memristor
Modeling
Oscillator circuits
Pt/TiO2
Resistive switching
Weak inversion analog circuit
Weak inversions
Memristors
Publisher: Institute of Electrical and Electronics Engineers Inc.
Abstract: This work aims to demonstrate the utilization of fabricated memristors in bioinspired analog circuits. To this end, two types of memristors of the structures Pt/TiO2/TiOx/Pt and Au/TiO2/TiOx/Au have been fabricated and characterized. The current-voltage measurement results were used to derive models for these devices both through curve fitting using MATLAB and consulting models proposed by other groups. A Verilog-A model was developed for modelling our fabricated memristor, which was used in Cadence Spectre simulations of an analog weak inversion Half Center Oscillator (HCO) circuit. The simulations show, through comparison of HCOs employing our memristors, linear resistors and no memristors or resistors, that the varying resistance of memristors create a dynamic damping effect and result in the modification of oscillation amplitude, rhythm and improved cycle stability. © 2022 IEEE.
Description: 6th International Symposium on Multidisciplinary Studies and Innovative Technologies, ISMSIT 2022 -- 20 October 2022 through 22 October 2022 -- 184355
URI: https://doi.org/10.1109/ISMSIT56059.2022.9932824
https://hdl.handle.net/20.500.11851/10382
ISBN: 9781665470131
Appears in Collections:Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection

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